Interfacial Fermi level and surface band bending in Ni/semi‐insulating GaAs contact
نویسندگان
چکیده
منابع مشابه
Contact Potentials, Fermi Level Equilibration, and Surface Charging.
This article focuses on contact electrification from thermodynamic equilibration of the electrochemical potential of the electrons of two conductors upon contact. The contact potential difference generated in bimetallic macro- and nanosystems, the Fermi level after the contact, and the amount and location of the charge transferred from one metal to the other are discussed. The three geometries ...
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1. growth of high dielectric constant oxides on InGaAs and GaN using molecular beam epitaxy (MBE) and atomic layer deposition (ALD) 2. structural studies on hetero-structures of nano-thick Al2O3, HfO2, and Ga2O3(Gd2O3)/ InGaAs (and GaN) using high-resolution x-ray reflectivity using in-situ/ex-situ high-resolution synchrotron radiation and high-resolution transmission electron microscopy 3. cor...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1995
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.359762